Study on Broad Pass-band and Wide Rejection Band of Band-pass Filters
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Citation
朱华新 [Zhu Huaxin], 王彤彤 [Wang Tongtong], 高劲松 [Gao Jinsong], 刘桂林 [Liu Guilin], 李 帅 [Li Shuai]. 宽通带宽截止带通滤光片研究 [Study on Broad Pass-band and Wide Rejection Band of Band-pass Filters]. 人工晶体学报 (Journal of Synthetic Crystals), 2014, 43(5): 1296-1301.
Keywords
- Band-pass filter
- Wide passband (540-750 nm)
- Wide rejection band (400-520 nm, 770-1100 nm)
- K9 substrate
- Long-wave pass filter
- Short-wave pass filter
- Combining stacks
- TiO2 (Titanium oxide)
- SiO2 (Silicon dioxide)
- High refractive index material
- Low refractive index material
- Electron beam physical vapor deposition (EBPVD)
- Transmittance
- Cut-off degree
- Half width at half-maximum (HWHM)
- Optical thin film
- Spectrophotometer
- Film layers (48 layers)
- Film thickness (5.03 μm)
- Stability
- Firmness
- Central wavelength
- Periodic stacks
- Transition layer
- Coupling effect
- Optical properties
- Deposition rate
- Vacuum degree
- Substrate temperature
- Adhesion
- Environmental test
Brief
This article details the design and fabrication of a wide passband (540-750 nm) bandpass filter with wide rejection bands (400-520 nm and 770-1100 nm) using TiO2 and SiO2 thin films on a K9 substrate, achieved by combining long-pass and short-pass filter stacks deposited via electron beam evaporation.
Summary
This paper presents the design, fabrication, and testing of a bandpass filter on a K9 substrate with a wide passband (540-750 nm) and wide rejection bands (400-520 nm and 770-1100 nm), achieved by combining long-wave pass and short-wave pass filter stacks made of TiO2 and SiO2 deposited using electron beam evaporation, resulting in good optical performance and environmental stability.
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